Subject Details
Dept     : ECE
Sem      : 2
Regul    : 2023
Faculty : JAGADESH.M
phone  : NIL
E-mail  : jagade.m.ece@snsct.org
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Syllabus

UNIT
1
MESH AND NODE ANALYSIS OF ELECTRIC CIRCUITS

THEORY Basic Components of electric Circuits, Charge, current, Voltage and Power, Voltage and Current Sources, Ohms Law, Kirchoff‘s Current Law, Kirchoff‘s voltage law, series and Parallel Connected Sources, Resistors in Series and Parallel, voltage and current division, Nodal analysis, Mesh analysis. PRACTICAL • Verification of ohm’s laws • Verifications of KVL & KCL.

UNIT
2
NETWORK THEOREMS AND SOURCE TRANSFORMATION

THEORY Network Theorems – Linearity and superposition, Thevenin, Norton, Reciprocity, Maximum power transfer and duality – Source Transformation -Star-delta conversion Problems , Application of network theorems in electronic and electric circuits. PRACTICAL • Verifications of Thevenin & Norton theorem. • Verification of Superposition Theorem. • Verification of maximum power transfer Theorem

UNIT
3
TRANSIENT AND RESONANCE IN RLC CIRCUITS

THEORY Basic RL and RC Circuits, The Source- Free RL Circuit, The Source-Free RC Circuit, , Driven RL Circuits, Driven RC Circuits, RLC Circuits, Series Resonance, Parallel Resonance, Quality Factor PRACTICAL • Determination of Resonance Frequency of Series & Parallel RLC Circuits.

UNIT
4
SEMICONDUCTOR DIODES AND THEIR APPLICATIONS

THEORY Formation of P-N junction, forward and reverse biased P-N junction - depletion and diffusion capacitances, switching characteristics, V-I characteristics, Zener breakdown, Avalanche breakdown, Zener diode, Rectifiers – Half Wave and Full Wave Rectifier, Zener as regulator, SCR, UJT- structure, operation and V-I characteristics, Clipper, Clamper, Photodiode and LED circuits PRACTICAL • Characteristic analysis of PN Junction Diode • Characteristic analysis of Half Wave and Full Wave Rectifier

UNIT
5
TRANSISTORS AND THEIR APPLICATIONS

THEORY BJT: Principle of transistor action–Current components–Cutoff, active and saturation region– Input and output characteristics–CE, CB, & CC Configurations, Fundamentals of JFETs and the device characteristics – JFET parameters, MOSFET – principle of operation- Depletion and enhancement modes, CMOS device structure, characteristics, Source Follower Circuits PRACTICAL • Characteristic analysis of BJT • Characteristic analysis of JFET devices

Reference Book:

1. Robert.L. Boylestead, "Introductory Circuit Analysis", Pearson Education India, 12th Edition, 2014. David Bell, "Fundamentals of Electric Circuits", Oxford University press, 7thEdition, 2009. 2. Allan H.Robbins, Wilhelm C.Miller, “Circuit Analysis Theory and Practice", Cengage Learning, Fifth Edition, 1st Indian Reprint 2013 3. Salivhanan, ‘Electron Devices and Circuits’, 4th edition, McGraw Hill Education

Text Book:

1. David A. Bell, "Electronic Devices and Circuits", Oxford Higher Education press, 5 th Edition, 2010. 2. Robert L. Boylestad and Louis Nasheresky, “Electronic Devices and Circuit Theory”, 10th Edition, Pearson Education / PHI, 2008. 3. Sudhakar. A and Shyam Mohan. SP “Circuits and Network Analysis & Synthesis”5th edition, Tata McGraw Hill, 2015. 4. Hayt Jack Kemmerly, Steven Durbin, "Engineering Circuit Analysis",Mc Graw Hill education, 9th Edition, 2018. 5. Jacob Millman, Chritos C Halkias, Satyabrata Jit, ‘Electronic Devices and Circuits’, 4th edition (SIE), McGraw Hill Education India Private Ltd., 2015

 

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